![]() ![]() ![]() In this simulation, the attached voltage leads to the injection of electrons at the negative terminal (source, left side), until those zone is 10 times negatively charged (100%). Stop the simulation and have a look at the distribution of charges at the 10 different zones.Īdjust the Drain voltage to 100% and start the simulation once again. ![]() Some minutes pass by until the state of equilibrium is reached The electric field caused by the charges inhibits holes from moving away from the gate area respectively electrons from moving into the P-doped region. The two zones of the gate get more and more negatively charged, the N-doped zone of the crystal becomes more positively charged. If an extra electron hits a hole, both charges vanish during a recombination process, leaving immobile charges at the places of the impurity atoms behind (see simulation of a diode for details). Without being attached to a voltage source, the movable charges inside are diffusing non directional through the crystal lattice. There are two P/N junctions inside of the JFET. The Java-application doesn't start? Here you can find infos about Java.ĭon't touch the adjustments. You can find the source code and all files used by this Java-app at the column download. News The Project Technology RoboSpatium Contribute Subject index Download Responses Games Shopping tips Contact Your Browser doesn't support embedded frames. ![]()
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